Nous accueillons, ce Vendredi 30 Septembre 2016 à 17h30 dans la salle XR203, le Dr. Nabil El-Hinnawy, Principal Microelectronics Engineer à Northrop Grumman Electronic Systems (Baltimore, USA). Nabil est le précurseur de l’introduction des matériaux à changement de phase (PCM) dans des fonctions RF (commutation bistable, co- intégration, antenne accordables etc .). Ses recherches à Northrop Grumman constituent l’état de l’art dans le domaine. Au détour d’une conférence européenne, Nabil nous fait l’amitié de visiter le laboratoire et présenter les derniers résultats dans le domaine de fonctions RF à base de matériaux PCM.

Il présentera les derniers développements dans le domaine de l’intégration des PCM lors d’un séminaire intitulé « Chalcogenide-Based Phase-Change Switches for RF Switching Applications ».

Abstract. Improvements to the GeTe inline phase-change switch (IPCS) technology have resulted in a 10x increase in the figure-of-merit (FOM) for radio-frequency (RF) switches compared to state-of-the-art. Omni-directional GeTe inline phase-change switching circuits have been fabricated and heterogeneously integrated with commercial SiGe BiCMOS technology to create a reconfigurable transceiver, demonstrating the feasibility of IPCS devices for lowpower, broadband reconfigurable RF systems. Initial data from a new monolithic integration scheme that is independent of the substrate and underlying semiconductor technology will also be presented. This integration enables the monolithic fabrication of GeTe IPCS devices on any semiconductor technology, allowing low-loss, low-power, broadband reconfigurable RF systems and SoCs (system-on-chip) to be realized in any technology.

Biography of the author. Nabil El-Hinnawy received his Bachelor of Science in Engineering Physics from the University of Illinois at Urbana-Champaign in 2006. He received his Master of Science in Applied Physics from The Johns Hopkins University in 2011, and his Ph.D. in Electrical and Computer Engineering at Carnegie Mellon University in 2016. He has worked at Northrop Grumman Electronic Systems in Baltimore, Maryland as microelectronics engineer since 2008, where his research focuses on the chalcogenide phase-change material devices for reconfigurable RF circuits and systems.

Malgré l’heure tardive et l’approche de la fin de semaine, venez nombreux !

Contact du séminaire : Aurelian Crunteanu (aurelian.crunteanu@xlim.fr) / seminaires@xlim.fr