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Advanced Instrumentation

This group focuses on the development of characterisation tools for non linear microwave devices . Applications are non linear device modelling for CAD , model verification , to aid in designing optimised circuits , mainly high efficient and linear power amplifiers

Main goals of this research group

Microwave transistor characterisation


Microwave transistor photograph

  • New semi conductor technology characterisation
  • Non linear electro thermal modelling of SC devices
  • Determination of optimal operating conditions for maximum power, or power added efficiency

Power Amplifier characterisation


MMIC power amplifier

  • Specific measurements for the behavioural modelling of microwave power circuits with memory
  • Experimental study of power amplifier linearisation techniques

Test Bench development


Photograph of the set up

Equipments : Narrow Pulse generator, Vector Network Analyser , Oscilloscope, On Wafer probe station

Main characteristics :

DC- 40 GHz

100V-2A

300ns

Thermal chuck [-40°C - 150°C]

Goals :

Characterisation of self heating effects and trapping effects in transistors 

Model extraction

Time domain source and load pull set up


Photograph of the set up

Equipments : Pulse generator , LSNA : Large signal Network Analyser, Computer controlled Tuners, on wafer probe station.

Mains characteristics :

1 GHz - 18 GHz

Multi-harmonic tuning

Power targeted : 100 W RF

Goals :

High power transistor characterisation under pulsed RF and pulsed DC conditions

Frequency domain load pull set up


Photograph of the set up

Equipments :

Pulse generator , Vector Network analyser , Computer controlled tuners , Active loops , oscilloscopes, On wafer probe stationparagraphe

Mains characteristics:

1 GHz - 26,5 GHz

Multi-harmonic tuning

Operating modes: CW , pulsed CW , two tone

Goals

Determination of device optimal operating conditions for maximum Power , power added efficiency or linearity

Non linear transistor model validation

Aid in designing microwave non linear circuits

Time domain envelope test bench


Photograph of the set up

Equipments :

Arbitrary waveform generator, sampling scope, signal analyser.

Main characteristics:

RF band : 1 GHz - 4 GHz

Modulation bandwidth : 80 MHz

RF power : few tens of W

Goals :

Characterisation of microwave power components with memory

Experimental investigations in power amplifier linearisation techniques

Time domain multi-tone test bench


Photograph of the set up

Equipments :

Multi-tone signal generator, LSNA : Large signal Network Analyser,

Main characteristics:

1 GHz - 20 GHz

Modulation bandwidth : 80 MHz

RF power : few tens of W

Goals :

Time domain waveform measurements

Hot S parameters or pumped small signal S parameter extraction

Main Areas of Expertise

Experimental optimisation of power transistor high efficiency operating classes


Measured time domain waveforms at transistor input and output

Non linear electro thermal model are implemented in CAD package


Pulsed I/V and pulsed S measurements of transistors

Analysis of signal and non linearities interaction


Time domain envelope measurements of a power amplifier with memory Dynamic AM/AM and AM/PM are recorded

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