GaN based High Electron Mobility Transistors (HEMT) present outstanding performances for microwave power amplification with respect to their silicon-based counterparts. However, this technology still suffers from low frequency memory effects originated from defaults in the structure, the so-called trapping effects. First part of this thesis aims to characterize and model the trapping effects. It has been shown that the slow-rate trapping effects could be separated from the fast-rate ones, by carrying specific pulsed I-V measurements. Consequently, a new, physic based, electrical model has been developed in order to take into account the slow traps. This model, added into an already existing GaN CAD model, has been validated through large signal measurements. Secondly, the thesis goal is to design a reconfigurable power amplifier architecture between a high power X band mode and a medium power C to X band mode for airborne T/R modules. A 10 GHz, encapsulated GaN transistors based PCB demonstrator has been realized in order to demonstrate both the power and the frequency bandwidth reconfigurability of the Load Modulated Balanced Amplifier (LMBA) architecture. Moreover, two GaN integrated power amplifiers have been designed in order to be reused in a full MMIC version of the architecture.